Total Ionizing Dose Effect and Radiation Hardness Analysis on Low-Leakage ESD Devices Fabricated on Double SOI Technology

The impact of the total ionizing dose (TID) on low leakage electrostatic discharge (ESD) protection devices fabricated on the 180-nm double silicon on insulator (DSOI) technology is investigated through experiments and numerical simulations. The devices under tests (DUTs) are MOS-DIO, MOS-SCR, and gate-grounded NMOSFET (GGNMOS). The transmission line pulse (TLP) measurements were carried out before and right after60Co gamma ray irradiation. The results show that the radiation-induced charges and traps mainly located in the top buried oxide (BOX1) can lead to deterioration of ESD characteristics, such as leakage and triggering voltage. After being irradiated to a dose of 300 krad(Si), the leakage of GGNMOS increases by about three orders of magnitude, and in addition, its snapback characteristic vanishes. Radiation hardness on DSOI-based ESD devices is analyzed based on experiment and simulation results, which implies that the negative voltage on back-gate electrode can mitigate the deterioration of ESD characteristics caused due to irradiation.