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This paper introduces a novel three-dimensional approach to model threshold voltage variation <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Δ Vₜₕ)</tex> during time-dependent dielectric breakdown (TDDB) stress of SiC trench MOSFETs in a wide temperature range <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T=0… 250∘C</tex> and studies the processes of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Δ Vₜₕ</tex> recovery at room temperature.
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Avramenko et al. (2024) studied this question.
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