Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

GaN products are now being used for a wide variety of applications that subject them to different types of stresses. Traditional reliability validation and calculations do not cover usage for many types of stresses seen in power supply applications, e.g. those from hard-switching or ringing. Further, typical mission profile specifications do not provide all the necessary information. There is no adequate methodology, therefore, to calculate lifetimes under actual-use conditions. In this paper, we provide a model-based methodology with broad applicability. We also show results demonstrating that TI GaN products are reliable for a range of power supply applications.