Drain Current Model for Antiambipolar Organic TFTs at Different Temperatures

A drain current model is presented for antiambipolar organic thin-film transistors (OTFTs) at different temperatures. Considering the temperature-dependent exponential distributed trap states density in energy gap of organic semiconductor, and analyzing electron and hole linear and saturation regimes, a drain current model is presented. The model can describe two-slope Arrhenius dependence in the drain current (with higher steepness at high temperature and reduced steepness at low temperature). The current peak and the gate voltage for current peak are investigated.