Experimental characterization demonstrates near-ideal built-in potential in optical float-zone gallium oxide diodes, highlighting strong viability for high-voltage power devices.
Abstract <?CDATA β-Ga₂O₃?> β − Ga 2 O 3 based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped <?CDATA β-Ga₂O₃?> β − Ga 2 O 3 sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa isolation, on breakdown voltage is investigated. The device shows near-ideal characteristics in terms of built-in potential. The parasitic series and shunt resistances are extracted, and their dependency on temperature is established. Modeling of temperature-dependent reverse leakage current is demonstrated using the thermionic emission model, Poole–Frenkel emission model, and Fowler-Nordheim tunneling mechanism. The procedure to extract relevant parameters is explained in terms of bias and temperature dependency. The combined model shows excellent agreement with experimental data over a wide range of bias and temperature. The maximum electric field of 2.3 MV cm −1 is achieved.
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Sahoo et al. (2024) studied this question.
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