Implementing Remote Doping and Suppressed Scattering in MoS₂ Field-Effect Transistor Using CMOS-Compatible Process

Doping technologies for 2-D materials, such as substitutional doping or molecular surface doping, inevitably introduce scattering caused by ionized dopants, resulting in carrier mobility degradation. Moreover, these processes are not CMOS-compatible and therefore hinder practical integration. In this study, we report the realization of remote doping and reduced carrier scattering in molybdenum disulfide (MoS <tex-math notation="LaTeX">₂</tex-math> ) field-effect transistor (FET) with silicon oxynitride/alumina (SiO <tex-math notation="LaTeX">ₓ</tex-math> N <tex-math notation="LaTeX">y</tex-math> /AlO <tex-math notation="LaTeX">ₓ</tex-math> ) encapsulation layer fabricated by CMOS-compatible process. Charged dopants in SiO <tex-math notation="LaTeX">ₓ</tex-math> N <tex-math notation="LaTeX">y</tex-math> remotely dope the underlying MoS <tex-math notation="LaTeX">₂</tex-math> channel by inserting a high- k dielectric AlO <tex-math notation="LaTeX">ₓ</tex-math> , keeping themselves spatially separated from the channel and contributing to an increase in carrier density and mobility. By depositing a charge modulation layer SiO <tex-math notation="LaTeX">ₓ</tex-math> N <tex-math notation="LaTeX">y</tex-math> , it is possible to achieve an electron density change ( <tex-math notation="LaTeX">Δ n</tex-math> ) of 2.2 <tex-math notation="LaTeX">×</tex-math> 10 <tex-math notation="LaTeX">¹²</tex-math> cm <tex-math notation="LaTeX">⁻²</tex-math> . Additionally, the remotely doped MoS <tex-math notation="LaTeX">₂</tex-math> FETs exhibit improved contact and increased room-temperature mobility compared to the pristine MoS <tex-math notation="LaTeX">₂</tex-math> FETs. Furthermore, the temperature-dependent characterization of the remotely doped MoS <tex-math notation="LaTeX">₂</tex-math> FET demonstrates significant suppression of charged impurity scattering.