Numerical Evaluation of P-Channel MOSFETs Depending on the TID Effect Using Electric-Thermal Analysis

Power devices designed for space applications face unique radiation challenges not encountered on Earth's surface, primarily from cosmic radiation. This radiation poses a significant risk of degradation and operational errors, necessitating a thorough evaluation of the reliability of these devices. Degradation mechanisms resulting from radiation exposure vary based on radiation type and energy levels. Our focus in this study is on the total ionizing dose (TID) effect, which represents the cumulative impact of continuous radiation exposure. The TID Effect results from radiation-induced ionization within the insulator, leading to the formation of electron-hole pairs. Consequently, holes become less mobile, captured by the gate oxide, and form a fixed charge. The TID effect causes an increase in the device's threshold voltage and leakage current. Space devices typically require evaluation for TID effects. In this study, we utilized a cobalt-60 gamma radiation source to assess the TID effect on Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. We measured the surface temperature and drain current of the irradiated device and quantitatively analyzed changes in its thermal and electrical properties using electric-thermal simulation.