Simulation and Performance Analysis of Tri-Gate n-FinFET Emphasizing on Material Oxide Variation SiO2, ZrO2 and La2O3

The research investigates on the impact of variations in material, dimension, and other factors on the performance characteristics of Fin-FET devices. Initially, a comparative analysis on performance and structural variations impact is carried out on Silicon on insulator (SOI) and Bulk oxide insulator (BOI) structures of Fin-FET using Silvaco-TCAD. Then, comparative analysis on the basis of material oxide i.e., SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and ZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and later compared La <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> with shape variation. Furthermore, capacitance analysis is conducted to quantify the impacts of the geometry. Hence, by considering the effects of variations in materials, dimensions, and other factors, this study lays a strong foundation for the continued evolution of Fin-FET devices, leading to enhanced performance and improved functionality in the semiconductor industry.