Optimization of the Process of Obtaining P-Type Semiconductors (CuO) in the Laboratory using Lean Six Sigma

The following work shows comparisons of the results of experiments related to the obtaining of metal oxides, specifically copper nanoparticles (Cu), making a comparison between two obtaining techniques, one by Cu sheet with a purity of 99.99% and the optimization of the obtaining process using the Lean Six Sigma methodology to obtain a Cu film deposited by the sputtering method. This technique that was used to obtain this material presents notable adhesion to the substrate, compositional control and purity. Furthermore, it is an environmentally friendly and, above all, reproducible technique, allowing a wide range of metals to be synthesized and characterized with this sputtering technique. Likewise, samples of Copper (Cu) metal deposits were thermally treated with the intention of obtaining copper oxide. copper (CuO) and be used as a proposed p-type semiconductor material based on metal oxides, which was formed through the thermal oxidation technique in a high temperature tubular furnace at 900°C, with air flow at 600sccm to form an oxidizing environment and consequently form continuous layers of Copper Oxide (CuO) material and are structurally analyzed with X-ray diffraction.