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Designing a power amplifier at microwave frequency and making it functional needs tremendous amount of effort right from device selection to system delivery. Various researchers have put considerable effort to realise GaAs FET devices and GaAs FET based amplifiers. This article is focused on characterisation of two stage GaAs FET amplifier network and analyse the performance by varying basic parameters to improve the efficiency. In this article practical values are considered to evaluate the performance and analysed in graphical manner. Further the analysis is extended for analysing the aging effect and long term reliability for space applications.
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Dashora et al. (2024) studied this question.
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