Design Comparing of Ku-band Power Amplifier MMIC

This article is devoted to a comparative analysis of the results of ADS CAD design and measurements of a monolithic power amplifier integrated circuit for the Ku band with an output power of at least 2 W. This IC is bi-directionally powered for ease of wiring, with bias voltage applied through a single pad, making it easy to wire-wrap the device for use in a thermally conductive QFN package. These results make it possible to evaluate the difference in parameters during the manufacture of a microcircuit in order to propose a solution in terms of adjusting the values of the elements of the circuit diagram. The device was developed in the frequency range from 12.7-16.2 GHz with a gain of at least 26 dB, input and output return losses of at least 10 dB, output power of at least 33 dBm with an added power efficiency of at least 24%. The process used in this work is 0.25 μm, GaAs, pHEMT.