GaN-Based 6–18 GHz Power Amplifier MMIC

A reactively matched wideband amplifier MMIC covering C-, X-, and Ku-band is presented. The matching networks are designed in such a way as to reduce the gain ripple without compromising large-signal parameters. The amplifier is fabricated using NANOTAM's <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.25μ m</tex> GaN-on-SiC HEMT technology. The MMIC obtained a minimum small signal gain of 20 dB with a gain ripple of only <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">± 2 \ dB</tex> in the entire frequency range from 6 GHz to 18 GHz. The output power <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">(Pₒᵤₜ)</tex> ranges from 34.8-39.4 dBm with an associated power-added efficiency (PAE) of 11.8-28.8 %. The variation of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Pₒᵤₜ</tex> and PAE for corresponding gain compression and input power levels is also reported. The overall chip size is 4.3 mm x 3.4 mm.