Broadband GaN-Based Power Amplifier MMIC for V-Band With Saturated Output Power Over 2 W

In this letter, a broadband <tex-math notation="LaTeX">V</tex-math> -band power amplifier (PA) monolithic microwave integrated circuit (MMIC) based on 0.1 <tex-math notation="LaTeX">μ</tex-math> m gallium nitride (GaN) high electron mobility transistor (HEMT) technology is reported. A stability circuit (SC) network before every stage of HEMT made it easy to achieve the broadband design. Lange coupler together with fork combiner achieve wideband impedance match and power combining. The <tex-math notation="LaTeX">V</tex-math> -band PA offers a small signal gain greater than 19.7 dB and a saturated output power greater than 2 W from 40 to 75 GHz with an associated power gain greater than 10 dB and 9% PAE. Moreover, it achieves a peak of 3.7 W (35.7 dBm) at 57 GHz in pulsed mode with an input power of 22 dBm. In comparison to known reported <tex-math notation="LaTeX">V</tex-math> -band PAs, our work presents state-of-the-art saturated output power in such a wide frequency range.