This paper presents a Monte Carlo (MC) study of photonic devices using Molybdenum Disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) treated with Cobalt-induced irradiation. Two-dimensional materials can make fast, compact, and affordable optoelectronic devices. The simulations observe how Cobalt irradiation affects MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> , a possible optoelectronic material deployed for high-speed sensing and communication systems. To understand device degradation mechanisms in realistic operational conditions, a wide range of Cobalt energies and fluences relevant to high energy radiation infrastructures like hospitals and research facilities are explored from 10 KeV to 1MeV. The majority of the energy lost during cobalt irradiation occurs as a result of phonon and ionization processes. In contrast to phonon energy loss, which is less than 35% and will decrease with increasing incident cobalt energy, ionization accounts for roughly 65% of energy loss. Our findings help develop radiation resilience solutions for MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-</inf> based photonic devices for long-lasting systems. By knowing how Cobalt irradiation impacts MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based photonic devices, we can create and optimize a technology.
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Balpande et al. (2024) studied this question.
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