Investigation of gamma induced effects on the properties of gamma irradiated Ce2S3 thin films

Nanostructure cerium sulphide (Ce 2 S 3 ) thin films were prepared using successive ionic layer adsorption and reaction (SILAR). The properties of the prepared samples were investigated as a function of gamma rays’ doses of 0, 250, 500, and 1000Gy, respectively. The X-ray diffraction (XRD) results suggest an orthorhombic phase structure for Ce 2 S 3 thin films and the crystallinity is enhanced with increasing gamma-ray doses. The irradiated thin films exhibit a variation in the energy band gap associated with the quantum confinement effect with larger grain size. This simple strategy of modifying properties of Ce 2 S 3 thin films by the incident gamma rays can be an attractive way to investigate this material for dosimetry and radiation detection.