1‐2: High Performance of InSnO Thin‐Film Transistors Enabled by Anodization Techniques

Amorphous ITO TFT technology based on the anodization approach is demonstrated, featured with the source/drain electrodes and channel region made of one single ITO layer. The anodized ITO TFT fabricated at room temperature shows high performance, including high on/off current ratio up to 109, high mobility of 56.1 cm2 V‐1 s‐1, low subthreshold swing of 0.14 V/decade, near‐zero threshold voltage of 1.7 V and good stress stabilities.