The mechanisms of the influence of electromagnetic radiation on various semiconductor products (SPs) are considered: germanium and silicon transistors and silicon integrated circuits. The possibilities of predicting the resistance of SPs to the action of EMR are discussed. A method for comparative evaluation of the reliability of batches of SPs is proposed, based on the measurement and comparison of electrical informative parameters on identical samples from a batch of SPs before and immediately after exposure to highfrequency electromagnetic radiation
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Горлов et al. (2024) studied this question.
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