Comparative study demonstrates higher etch rates and deeper ion penetration with helium than argon in silicon, highlighting that removal ions considerably affect subsequent modification steps.
A comparative study of argon (Ar) and helium (He) plasmas is conducted in quasi‐atomic layer etching (ALE) processes for silicon (Si). The ALE window is identified to be between 35 and 55 V for Ar and 25–45 V for He, with an etch per cycle of 6.0 Å/cycle for Ar and 7.5 Å/cycle for He. Thirty percent thicker chlorination layers are observed with Cl 2 /He ALE than with Cl 2 /Ar ALE in the chlorination step. The penetration depth of He ions is twice that of Ar ions, with a standard deviation of 4.5 times greater. This study demonstrates that He ions in the removal steps considerably affect the subsequent modification steps in Si ALE.
No takes yet. Share an insight, caveat, or question.
Kim et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: