Study of defect density of copper vacancies in Chalcogenide CuSbS2, CuSbSe2, CuBiS2 and CuBiSe2 heterojunction thin film Solar Cells

Abstract In the past decade, a new family of ternary chalcogenide absorber (TCA) materials MIMIIX₂ (where, MI= Cu, Ag, Pb, MII =Sb, Bi, In and X=S, Se, Te) have studied. The Copper family of ternary chalcogenide CuSbS₂ CuSbSe₂ CuBiS₂ and CuBiSe₂are amazing absorber materials for thin film solar cells due to their suitable band gap, high absorption coefficient, inexpensive, nontoxic, sustainable and environment friendly. In this paper, simulated copper vacancies defect density of CuSbS₂ (CAS), CuSbSe₂ (CASe), CuBiS₂ (CBS) and CuBiSe₂(CBSe) based heterojunction thin film solar cells (HJTFSC) with buffer CdS, intrinsic i-ZnO, window ZnO: Al and back contact Mo, and set the cell scheming ZnO: Al/i-ZnO/n-CdS/p- TCA/Mo. Major focus of influence of copper vacancies defect density impact on the performance of ternary chalcogenide with various parameters of solar cells i.e., short circuit current density (Jsc), open circuit voltage (Voc), form factor (FF) and efficiency (η). The cell parameter set at constant temperature 300K, thickness 2.5mm, carrier density 5x10¹⁶cm⁻³, front internal transmission coefficient 1, reverses voltage across L-R -1Vand illumination intensity 100 mW/cm²with AM1.5 sun light.