Back-illuminated image sensor for hyperspectral application based on P-type high-resistivity silicon substrate

In this paper, a CCD image sensor based on P-type high-resistivity silicon substrate is designed and developed. The effective array size of the device is 6144×526 pixels, and the pixel size is 15μm×15μm. The device adopts the design of large area boron injection in the non-photosensitive region, which improves the amplifier characteristics of the P-type high-resistivity silicon-based CCD. The linear operating range of the amplifier is extended from 16.0V~16.5V before optimization to 10.0V~14.0V, and the DC gain is increased from 0.50 before optimization to 0.85. The device employs the visible and near-infrared back-illumination antireflection film design. The average quantum efficiency of the device is better than 0.85 in the wavelength range of 400nm~750nm, and the quantum efficiency can reach 0.43 at the near-infrared wavelength of 900nm. The device is designed by non-pushing-junction multi-energy boron-injection technology, and the MTF of the device is better than 0.40 under complex light condition.