SCN-doped SnO2 electron transport layer enhanced photoelectric performance of all-inorganic CsPbBr3 perovskite solar cells

With remarkable improvement in power conversion efficiency (PCE), perovskite solar cells (PSCs) have garnered a lot of interest in the photovoltaic industry. Among them, the all-inorganic CsPbBr₃ perovskite has been widely used in solar cells because of its exceptional stability and potential commercial applications. In addition, the advantages of low-temperature preparation that minimizes energy loss and favorable energy level arrangement with a wide band gap have made SnO₂ potentially displace TiO₂ as the most common electron transport layer (ETL) material. However, the performance of SnO₂- based PSCs was restricted by the defects and under-coordinated tin ions in SnO₂ films. In this study, we prepared a high-quality SCN-doped tin oxide (SnO₂) electron transport layer, obtaining ITO/SCN-SnO₂/CsPbBr₃/Carbon structural solar cell. The open circuit voltage, fill factor, short circuit current density, and PCE of the best device was 1.37 V, 68.68%, 7.02 mA/cm2, and 6.61%, respectively, higher than the pristine devices. The results indicated that SCN doping could achieve higher-quality SnO₂ electron transport layers, thereby improving the performance of inorganic CsPbBr₃ perovskite solar cells.