Avoiding-mode-crossing-free micro-resonators on a wafer-scale ion-sliced 4H-silicon-carbide-on-insulator platform

4H-silicon carbide-on-insulator (4H-SiCOI) has emerged as a contender for integrated photonics owing to its properties such as CMOS compatibility, high second-and-third-order nonlinearities. So far, various micro-resonators have been realized on the 4H-SiCOI platform, enabling numerous nonlinear optical applications. However, micro-resonators for nonlinear optics featuring wide waveguides inherently suffer from avoid mode crossing (AMX) effect. Here, we introduce Euler bends to build micro-resonators on a 4H-SiCOI wafer prepared by the ion-cutting technique. The fabricated micro-resonators show high-Q values above 1×10⁵ and the AMX effect is remarkably suppressed. The avoid-mode-crossing-free micro-resonators reported on the CMOS-compatible wafer-scale 4H-SiCOI platform would constitute an important ingredient for the envisaged large-scale integrated nonlinear photonic circuits.