Ultrathin TIO₂ Channel HfLaO FeFET with Low Operation Voltage

An ultrathin metal-ferroelectric-semiconductor (MFS) structured ferroelectric field effect transistor (F eFET) with a TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel and HfLaO ferroelectric (FE) layer is reported for low voltage operation capability. The 8 nm HfLaO and 6 nm TiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layers were continuously deposited by in-situ atomic layer deposition (ALD). Reasonable memory characteristics and low voltage operation capabilities, including 15 µC/cm 2 remnant polarization (Pi), 0.9 V coercive voltage (Vc) and 1.28 V memory window (MW) are demonstrated in the fabricated ultrathin FeFETs.