Precise technique can remove Al2O3 film slowly and evenly by adjusting the gas ratio, pressure, power, temperature and other parameters in ICP plasma. The volatile will release occurs during a physical bombard between a gaseous reactant and the surface modified layer. In this study, BCl3 and Ar/He plasma were used to carry out precise surface etching of Al2O3 layer. Overall this technique has the potential at low temperature for ~50A Al2O3 etching process in semiconductor integration.
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Cheng et al. (2024) studied this question.
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