Solution-Processed Organic CMOS Inverter via Contact Modulation

Organic field-effect transistors (OFETs) have been widely studied, yet realizing complementary metal-oxide-semiconductor (CMOS) integrated circuits still poses significant challenges. Here, we use a single layer of ambipolar polymer organic semiconductor (OSC) to achieve solution-processable organic CMOS inverters by modulating the metal-semiconductor contacts so as to reduce the Schottky barriers for N/P MOS respectively. Ti-contacted (Titanium) N-type OFETs and Au-contacted (gold) P-type OFETs are fabricated on the same substrate. This technology not only presents the advantages of low cost and large-scale integration but also possesses a straightforward processing method, providing a promising solution to the realization of organic CMOS circuits.