Three-terminal metal-oxide electrochemical random-access memory (MO-ECRAM) with high switching linearity has attracted much attention in the novel neuromorphic computing field. In this work, a 2D atomistic Monte Carlo simulation is developed based on the dynamic behaviors of oxygen vacancies. The simulation can quantify the linear/nonlinear switching characteristics under various voltage and temperature stresses, which will be beneficial to optimize the performances of MO-ECRAM.
No takes yet. Share an insight, caveat, or question.
Zhu et al. (2024) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: