Silicon nitride (SiN) has long been chosen for the MOSFET sidewall spacers owing to its exceptional blocking capabilities, insulating properties, thermal stability, and resistance to hydrofluoric acid. As the device is continually scaling down, the parasitic capacitance stemming from the gate and contact continues escalating. It can impact the signal stability. Silicon oxycarbonnitride (SiOCN) material emerges as a promising substitute for SiN, presenting advantages such as ease of processing and a favorable low dielectric constant (K). This paper aims to study properties of SiOCN films grown by atomic layer deposition (ALD).
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Duan et al. (2024) studied this question.
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