This paper demonstrates a low-power designed and highly integrated multimode sensor chip that employs wafer level packaging and TSV based 3D integration to ensure high integrated density, high flexibility and high reliability. Through-silicon vias (TSVs) can be adopted to extract electrodes from the back or cross of the wafer to achieve shared integrated circuits, miniaturization of devices and anti-interference capabilities. The integrated multimode sensing chips based on 3D packaging realize the miniaturization of high-performance chips and further provide opportunities for pattern recognition based multimode single-device sensing chips. This unique technology solutions can achieve high compatibility and high packaged manufacturing according to different needs and can be widely applied to various microsystem chips.
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Zhang et al. (2024) studied this question.
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