The performance of monolayer Mos2 devices is restricted by low carrier density and contact resistivity. It is crucial to discover a new doping technology to overcome these limitations. In this study, we have devised a novel approach for doping Mos2. By utilizing the ZnO polarity of the different elements interface, Mos2 can be doped with n/p doping. We also constructed a dual-ended device and found that this method indeed increased the intrinsic current at 4.5nm by 10 6 times.
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Xu et al. (2024) studied this question.
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