A new fast X-ray diffraction apparatus (ÅX-D100) for epitaxial (EPI) thin films has been developed with a convergent X-ray beam and a 2-D detector. The optic consists of an X-ray source of Cu-Target and a focusing capillary lens. The rocking curves (RC) for single crystals (GaAs, SiC, and InP) and epitaxial thin films (Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> As) were measured by using symmetric scanning method (Theta to theta scan). We also observed the periodic structure of superlattice layer stacks and calculated the Al composition, strain and density according to the RC of a Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf> As epitaxial thin film. The experimental results indicated that the theta to theta scan mode of fast X-ray diffraction (XRD) device was appropriate for RC measurement and One-shoot mode could be used for in-line monitoring of the epitaxial films.
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