Optoelectronic neuromorphic devices have driven the effective development of artificial vision systems, thanks to their ability to capture, store, and process visual information in the environment. We propose a single transistor based optoelectronic memristor that modulates the resistance of MOS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channels through photo-generated carriers, affects the voltage bias of the threshold switch (TS) drain, and achieves the basic neural functions of simulating leakage integration and excitation (LIF) and depolarization. Single transistor neurons drive the efficient development of neuromorphic systems.
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Fan et al. (2024) studied this question.
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