Investigation of Electrical Characteristics of a Fabricated Lgad Detectors at High and Low Temperatures

The High Granularity Time Detector (HGTD) project need advanced Low-Gain Avalanche Detector (LGAD) for constructing the timing precision layer in the ATLAS detector. It undergoes a strong environmental temperature impact for cooling the absorbed high-energy particles. In this paper, an investigation of the manufacturing process of LGAD detectors and their characteristics in terms of dark current and breakdown voltage at high and low temperatures are systematical explored. The behavior of carrier transport within the device at various temperature conditions was analyzed using TCAD simulation tools.