The heterojunction of polycrystalline Li-doped IrO₂, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive x-ray spectroscopy mapping confirmed the films' composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.
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Alquwayzani et al. (2024) studied this question.
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