Design and Investigation of Charge Plasma Based NCFET on MFIS and MFMIS Structure

In this research paper, MFIS (Metal Ferroelectric Insulator Semiconductor) and MFMIS (Metal Ferroelectric Metal Insulator Semiconductor) structures are used to investigate a charge plasma based negative capacitance junctionless transistor. The devices are protected from the random dopant fluctuation by the charge plasma produced charge carriers, resulting in a steady threshold voltage. For both topologies, a thorough TCAD investigation of the influence of channel length scaling over short-channel effects (SCEs) is presented. In contrast to MFIS, where the fringing field impact is restricted to the channel region only, the inside metal layer makes the MFMIS structure exhibits significant increment in threshold voltage (VT), reductions in sub threshold swing (SS), and reduced DIBL. The effect of channel length scaling over SCEs are given and compared for both configurations using TCAD simulations.