Active-matrix micro-LED display using MoS2 TFTs

The integration of transition metal chalcogenides, such as MoS₂, with III-V compound semiconductors has posed significant challenges in the implementation of two-dimensional materials in optoelectronics applications. In this presentation, we propose a breakthrough method for directly growing molybdenum disulfide (MoS₂) on III-V compound semiconductors, compatible with a batch microfabrication process. By synthesizing a thin film of MoS2 on a gallium- nitride-based epitaxial wafer, we successfully developed a thin film transistor array. In addition, we achieved seamless monolithic integration of the MoS₂ thin film transistor with micro-light-emitting-diode (micro-LED) devices, resulting in a state-of-the-art active-matrix micro-LED display. This novel approach paves the way for promising heterogeneous integration, combining established semiconductor technology with emerging two-dimensional materials, ultimately enabling high-performance optoelectronic systems.