III-N UV LEDs are currently of major interest for applications such as sterilisation (UVC) and phototherapy (UVB). Most work to date has focussed on the AlGaN system which is relatively well understood, but this limits the possibility for bandgap engineering in the active region structure. In this presentation we will outline the demonstration of a UV Light emitting diode operating around 340 nm using boron containing (BAlGaN) quantum wells. The device exhibited a higher output intensity compare to the boron free reference sample prepared at the same time. The potential for using such alloys for UVB and UVC devices will be discussed.
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Parbrook et al. (2024) studied this question.
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