In this paper, we present thin-film photodetector (TFPD) image sensors for the short-wave infrared (SWIR) range. Monolithic integration of quantum dot (QD) absorbers enables quantum efficiency of 70% at 1400 nm and pixel pitch below 2 μm. We present image sensors on custom CMOS readout fabricated using 130 nm node. We review latest advancements on the photodiode stack and the pixel engine, including the thin-film pinned photodiode architecture. Furthermore, we study the manufacturing flows to realize full wafer capability for volume processing. QD image sensors are paving the way to add augmented vision into future XR systems with extra functionalities.
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Malinowski et al. (2024) studied this question.