Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits

We present a postgrowth selective-area-intermixing approach for on-chip III-V based monolithically integrated laser-waveguide structures for photonic integrated circuits. Implanting selective areas with an energy of 300 KeV and dose of 5 ×1012 cm-2 induced crystal defects in the InAs quantum dot gain material, results in a shifted absorption edge and complete quenching of optical emission. We successfully recovered the optical quality of the gain material through optimized rapid thermal annealing at 635 OC and achieved enhanced intermixing in the implanted region thus causing a relative blueshift of 20 nm in the passive waveguides, mitigating absorption at the laser emission wavelength.