The next phase of all silicon electro-optical modulators

Integrated electro-optic modulators offer huge potential to meet communications and computations' rapidly growing bandwidth requirements. Devices based on silicon allow high-volume, low-cost CMOS fabrication, and co-integration with the CMOS circuits. They are promising candidates for mass-producible Tb/s-scale inter-rack and intra-rack interconnects. This talk will focus on our advancement of silicon-based optical modulators: (1) miniaturized all silicon MOSCAP modulators for co-packaged optics and its integration with low voltage drivers, allowing low optical power consumption of 2 pJ/bit. (2) Novel carrier absorption enhanced electro-optical modulation in MOSCAP ring resonators towards integration with ultra-low voltage (<1V) CMOS drivers; (3) Carrier depletion ring unity device for large scale and high bandwidth density error-free links; (4) Linear DC-Kerr effect dominated silicon modulators towards lidar and quantum applications.