Comparison of second harmonic generation efficiency of orientation patterned GaAs, CdGeAs2, ZnGeP2 and AgGaSe2 using a pulsed CO2 laser

Measurement of second harmonic generation efficiency of a 100 ns duration, 9.271 μm CO2 laser in orientation patterned GaAs (OPGaAs) crystal (3 mm x 7.5 mm x 39.7 mm), and in crystals of AgGaSe², ZnGeP₂ and CdGeAs₂ in their largest dimensions currently available will be presented. At maximum fundamental beam fluence of 2.5 J/cm^2, 15 % conversion efficiency was achieved with the OPGaAs crystal, which was the highest among the materials studied in this work. All samples were at the ambient laboratory temperature of 23 C and the radius of the incident beam was 0.7 mm (HWe^(-1)M of intensity).