A method for reduction of phase variance in RF envelope tracked power amplifiers is proposed and demonstrated through simulations and measurements of an implemented GaN on SiC Power Amplifier. Simulations of a traditional one transistor implementation is compared to the proposed solution, using a 2.1 GHz 10W power amplifier built around the CG2H40010F transistor shows reductions in phase differences of up to 21.5 degrees (from 48 down to 26.5 degrees) over a wide range of supply and gate voltages. Measurements show correspondence with simulations demonstrating improvement in phase difference.
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Hagen et al. (2024) studied this question.
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