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This paper describes the design and fabrication of a slot waveguide ring-assisted Mach-Zehnder modulator (RAMZM) on the InP membrane on Silicon (IMOS) platform. The low-frequency characterization of this modulator reveals that it can achieve a <tex-math notation="LaTeX">VπLπ</tex-math> product as low as 5.1 <tex-math notation="LaTeX">$V.mm$</tex-math> and an extinction ratio equal to 12 dB. The 3-dB electro-optical bandwidth of this modulator is measured to be 8.5 GHz. This paper discusses working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance, and the prospects of this modulator.
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Kashi et al. (2024) studied this question.
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