Full InGaN red emission on different InGaN pseudo-substrates for native full color micro-displays

To fabricate native and monolithic full color micro-displays with a pixel pitch below 10 µm, the three primary colors should be achieved with the InGaN alloy. The prerequisite is to get an efficient red emission with thin InxGa1-xN quantum well (QW) width and an In content of 35%. However, the In content is limited to 25% when grown on GaN. A full InGaN structure combined with different types of relaxed InGaN pseudo-substrates are used to reduce the strain in the active zone. Red electroluminescence was obtained until 650 nm. Homogeneous red emitting InGaN based QWs were also demonstrated.