Fabrication method of GaN-air channels for embedded photonic structures

We present a method of in-plane modification of the refractive index using ion implantation and electrochemical etching of GaN layers. Proposed method allows for the fabrication of embedded air-GaN channels that can be periodically arranged inside III-nitride heterostructures. Importantly, a flat top surface is preserved for further regrowth. High refractive index contrast between air and GaN makes the proposed technology attractive for the fabrication of embedded photonic structures such as diffraction gratings for distributed feedback laser diodes (DFB LDs). We discuss the impact of the different design of air-GaN channels on the properties of DFB LDs.