Recent carrier diffusion length measurements in InGaN quantum wells (QWs) revealed the potential for carriers to travel tens of micrometers before recombination. These observations are consistent with the efficiency loss in InGaN micro-Light-Emitting-Diodes (µLEDs) with size reduction down to a few microns. From micro-photoluminescence and cathodoluminescence measurements, a QW-width-dependent study on InGaN QWs grown on various substrates show a diffusion length reduction with QW thickness. This is consistent with the fact that carrier lifetime decreases with QW-width in c-plane InGaN QWs, due to a Quantum-Confined-Stark-Effect (QCSE) reduction. Additionally, a study on the effects of carrier density and substrate-type will be presented.
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Litschgi et al. (2024) studied this question.
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