Experimental study demonstrates wideband power combining in a D-band active antenna, highlighting advances in compact high-frequency transmitters.
This article presents a high-integrated, wideband, multifeed, active antenna with in-antenna power combining for D-band applications. The proposed design consists of an active section and a passive section. In the active section, differential power amplifiers (PAs) are integrated with zero-degree transmission line for power dividing. The passive section includes a differential surface-mounted dielectric resonator (DR) with high-order mode to enhance on-chip radiation. The utilization of this novel in-antenna power combining technique disrupts the conventional 50- <tex-math notation="LaTeX">Ω </tex-math> matching rule, while concurrently incorporating surface-mounted DR technology. These two approaches synergistically facilitate the achievement of wideband performance, compact size, low loss, and high integration. Measurements demonstrate an antenna gain of 4.4 dBi, a 3-dB beamwidth of 60°, an effective isotropic radiated power (EIRP) of 15 dBm at 134 GHz, and a 3-dB EIRP bandwidth of 115–151 GHz. To the best of the authors' knowledge, the novel D-band complementary metal-oxide-semiconductor (CMOS) active antenna achieves the widest 3-dB EIRP bandwidth and the highest EIRP per element.
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Wan et al. (2024) studied this question.
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