We synthesize high-quality single crystal of CeGaSi by a Ga self-flux method and investigate its physical properties through magnetic susceptibility, specific heat and electrical resistivity measurements as well as high pressure effect. Magnetic measurements reveal that an antiferromagnetic order develops below T m ∼ 10.4 K with magnetic moments orientated in the ab plane. The enhanced electronic specific heat coefficient and the negative logarithmic slope in the resistivity of CeGaSi indicate that the title compound belongs to the family of Kondo system with heavy fermion ground states. The max magnetic entropy change − Δ S M max ( μ 0 H ⊥ c , μ 0 H = 7 T) around T m is found to reach up to 11.85 J⋅kg −1 ⋅K −1 . Remarkably, both the antiferromagnetic transition temperature and −ln T behavior increase monotonically with pressure applied to 20 kbar (1 bar = 10 5 Pa), indicating that much higher pressure will be needed to reach its quantum critical point.
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Zhang et al. (2024) studied this question.
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