Pressure-Tuned Ideal P-Type Schottky Contacts

Abstract Contact engineering has been widely exploited in integrated circuits and functional devices for high performance and low power consumption. In this work, we develop an in-situ, reversible, and full-device-scale approach to tunable 2D van der Waals contacts. Ideal p-type Schottky contact free from dangling bonding and Fermi-level pinning are constructed at the structural superlubric graphite-MoS₂ interfaces. Electronic tunneling across the interface can then be activated by applying pressure beyond a threshold where a transition in the nature of electronic coupling occurs and further amplified at higher load. A record-high ideality factor approaching 1 and an off-state current of 10⁻¹¹ A were reported. We showcase a wearless Schottky generator operating at the 2D contact with an optimized exceptional overall efficiency of 50% in converting weak and random external stimuli into electricity. The device reaches a high current density of 31 A/m² and endures over 120,000 cycles, which can find applications in neuromorphic computing and mechanosensing.