An n-Type Schottky Contact with Low Tunneling Resistance in 2D FeB2/SiC Heterostructure

Key Points

• This work aims to address the challenge of low-resistance metal-semiconductor contacts in 2D electronic devices.
• Systematic investigation of the structural stability and electrical characteristics of the n-type Schottky contact.
• Design of the FeB2/SiC heterostructure to optimize contact performance.
• Achieved low tunneling resistance in the n-type Schottky contact.
• Demonstrated enhanced electrical performance suitable for high-performance 2D electronic applications.