Ferroelectric Gate Enabled Programmable Photovoltaics in vdWHs for Self-Powered In-Memory Logics

The adaptive response of intelligent devices lays the foundation to integrating multiple functions at one device level. Here, with the combination of experimental observation and theoretical calculation, we report a structure of a ferroelectric field-effect diode (Fe-FED) based on the ferroelectric gated WSe2/MoS2 van der Waals heterojunction (vdWH) channel. The ferroelectric polarization-tuned photovoltaic response is exhibited with nonvolatility, which is completely distinctive from the gate-tunable conductance state of conventional devices. Moreover, the programmable photovoltaics enable the application of the Fe-FEDs in self-powered photodetection and in-memory logic. The synchronous implementation of photodetection, photomemory, photologic, and photopowering in one device level realizes a "four-in-one" system and reduces the hardware overhead of computing architecture.